2N7002A_09 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R_DS(ON).
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Drain-Gate Voltage (R_GS 1 )
Gate-Source Voltage
Drain Current
Continuous
Pulsed
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
T_j
T_stg
RATING
60
60
20
115
800
200
150
-55 150
UNIT
V
V
V
mA
mW
2N7002A
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. SOURCE
2. GATE
3. DRAIN
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
EQUIVALENT CIRCUIT
D
G
Marking
WB ^{Type Name}
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
SYMBOL
BV_DSS
I_DSS
I_GSSF
I_GSSR
TEST CONDITION
V_GS=0V, I_D=10 A
V_DS=60V, V_GS=0V
V_GS=20V, V_DS=0V
V_GS=-20V, V_DS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
1
-1
UNIT
V
A
A
A
2009. 7. 2
Revision No : 7
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