2N7000 Datasheet, PDF (1/4 Pages) Motorola, Inc – CASE 29-04, STYLE 22 TO-92 (TO-226AA)

SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low R_DS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous
Pulsed^{(Note 1)}
Drain Power Dissipation
Junction Temperature
V_DSS
V_GSS
I_D
I_DP
P_D
T_j
Storage Temperature Range
T_stg
Note 1) Pulse Width 10 , Duty Cycle 1%
RATING
60
20
500
2000
625
150
-55 150
UNIT
V
V
mA
mW
2N7000
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00+_ 0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. SOURCE
2. GATE
3. DRAIN
TO-92
EQUIVALENT CIRCUIT
D
G
S
PLEASE HANDLE WITH CAUTION.
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
BV_DSS
I_DSS
I_GSSF
Gate-Body Leakage, Reverse
I_GSSR
TEST CONDITION
V_GS=0V, I_D=10 A
V_DS=60V, V_GS=0V
V_GS=20V, V_DS=0V
V_GS=-20V, V_DS=0V
MIN.
60
-
-
-
TYP.
-
-
-
-
MAX.
-
1
100
-100
UNIT
V
A
nA
nA
2009. 11. 17
Revision No : 2
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