2N5551S_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
hHigh Collector Breakdwon Voltage
: V_CBO=180V, V_CEO=160V
hLow Leakage Current.
: I_CBO=50nA(Max.) V_CB=120V
hLow Saturation Voltage
: V_CE(sat)=0.2V(Max.) I_C=50mA, I_B=5mA
hLow Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
180
Collector-Emitter Voltage
V_CEO
160
Emitter-Base Voltage
V_EBO
6
Collector Current
I_C
600
Base Current
I_B
100
Collector Power Dissipation
P_C *
350
Junction Temperature
T_j
150
Storage Temperature Range
T_stg
-55q150
Note : * Package Mounted On 99.5% Alumina 10ƒ8ƒ0.6ɘ)
UNIT
V
V
V
mA
mA
mW


2N5551S
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Marking
ZF ^{Type Name}
Lot No.
1999. 11. 30
Revision No : 2
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