2N3904_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN General Purpose Transistor

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
hLow Leakage Current
: I_CEX=50nA(Max.), I_BL=50nA(Max.)
@V_CE=30V, V_EB=3V.
hExcellent DC Current Gain Linearity.
hLow Saturation Voltage
: V_CE(sat)=0.3V(Max.) @I_C=50mA, I_B=5mA.
hLow Collector Output Capacitance
: C_ob=4pF(Max.) @V_CB=5V.
hComplementary to 2N3906.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Dissipation
Ta=25
*P_C
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
*Cu Lead-Frame : 625mW(@Ta=25)
1.5W(@Tc=25)
Fe Lead-Frame : 400mW(@Ta=25)
1.0W(@Tc=25)
RATING
60
40
6
200
50
625
400
1.5
1.0
150
-55q150
UNIT
V
V
V
mA
mA
mW
W


2013. 7. 08
Revision No : 2
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