2N2906U_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N2906U
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
hLow Leakage Current
: I_CEX=-50nA(Max.), I_BL=-50nA(Max.)
@V_CE=-30V, V_EB=-3V.
hExcellent DC Current Gain Linearity.
hLow Saturation Voltage
: V_CE(sat)=-0.4V(Max.) @I_C=-50mA, I_B=-5mA.
hLow Collector Output Capacitance
: C_ob=4.5pF(Max.) @V_CB=5V.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-40
-40
-5
-200
-50
200
150
-55q150
UNIT
V
V
V
mA
mA
mW


EQUIVALENT CIRCUIT (TOP VIEW)
Marking
2008. 9. 23
Revision No : 1
1/4