2N2906U Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=-50nA(Max.), I_BL=-50nA(Max.)
@V_CE=-30V, V_EB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V_CE(sat)=-0.4V(Max.) @I_C=-50mA, I_B=-5mA.
Low Collector Output Capacitance
: C_ob=4.5pF(Max.) @V_CB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-40
-40
-5
-200
-50
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
2N2906U
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ COLLECTOR
4. Q₂ EMITTER
5. Q₂ BASE
6. Q₁ COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
1
2
3
Marking
6
5
4
ZC ^{Type Name}
Lot No.
1
2
3
2008. 9. 23
Revision No : 1
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