2N2904E Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I_CEX=50nA(Max.), I_BL=50nA(Max.)
@V_CE=30V, V_EB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: V_CE(sat)=0.3V(Max.) @I_C=50mA, I_B=5mA.
Low Collector Output Capacitance
: C_ob=4pF(Max.) @V_CB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Rating
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
T_stg
RATING
60
40
6
200
50
200
150
-55 150
UNIT
V
V
V
mA
mA
mW
2N2904E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
A1
1.0 +_ 0.05
2
5
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
J
0.12+_ 0.05
P
P
P
5
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ BASE
4. Q₂ COLLECTOR
5. Q₂ EMITTER
6. Q₁ COLLECTOR
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
1
2
3
Marking
Type Name
ZC
2002. 9. 17
Revision No : 0
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