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JCS9N90FT Datasheet, PDF (6/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET
R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS9N90FT
Breakdown Voltage Variation
vs. Temperature
1.2
On-Resistance Variation
vs. Temperature
4.0
3.5
1.1
3.0
2.5
1.0
2.0
0.9
Notes:
1. V G S = 0V
2. I D = 250μA
0.8
-75 -50 -25
0
25
50
75 100 125 150
T j [℃ ]
Maximum Safe Operating Area
1.5
1.0
Notes:
0.5
1. VGS=10V
2. ID=4.5A
0.0
-75 -50 -25
0
25
50
75 100 125 150
T j [℃ ]
Maximum Drain Current
vs. Case Temperature
10
Operation in This Area
102
is Limited by RDS(ON)
8
10μs
101
100μs
6
1ms
100
10-1
100
10ms
4
Note:
100ms
1 TC=25℃
DC
2
2 TJ=150℃
3 Single Pulse
0
101
102
103
25
VDS Drain-Source Voltage [V]
50
75
100
125
150
TC Case Temperature [℃]
Transient Thermal Response Curve
1
0 .1
0 .0 1
D = 0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
N o te s :
1 Z θ J C(t)= 1 .8 4 ℃ /W M a x
2 D u ty F a c to r, D = t1 /t2
3 T J M -T c = P D M * Z θ J C(t)
P DM
t1
t2
1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
t1 S q u a re W a v e P u ls e D u ra tio n [s e c ]
版本:201010A
6/8