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JCS8N60B Datasheet, PDF (4/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – N-CHANNEL MOSFET | |||
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çµç¹æ§ ELECTRICAL CHARACTERISTICS
å¼å
³ç¹æ§ Switching Characteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on)
tr
VDD=300V,ID=7A,RG=25â¦
ï¼note 4ï¼5ï¼
延è¿æ¶é´ Turn-Off delay time
td(off)
ä¸éæ¶é´ Turn-Off Fall time
tf
æ
æçµè·æ»é Total Gate Charge Qg
æ
ï¼æºçµè· Gate-Source charge
Qgs
æ
ï¼æ¼çµè· Gate-Drain charge
Qgd
VDS =480V ,
ID=7A
VGS =10V ï¼note 4ï¼5ï¼
JCS8N60B
- 30 70 ns
- 80 170 ns
- 125 260 ns
- 60 110 ns
- 25 35 nC
- 6.0 - nC
- 10 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain
-Source Diode Forward Current
æ£åæ大èå²çµæµ
IS
- - 7.5 A
Maximum Pulsed Drain-Source
Diode Forward Current
æ£ååé
ISM
- - 30 A
Drain-Source Diode Forward
VSD
Voltage
ååæ¢å¤æ¶é´
Reverse recovery time
trr
ååæ¢å¤çµè·
Reverse recovery charge
Qrr
çç¹æ§ THERMAL CHARACTERISTIC
项ç®
Parameter
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Thermal Resistance, Junction to Case
ç»å°ç¯å¢ççé»
Thermal Resistance, Junction to Ambient
VGS=0V, IS=7.0A
- - 1.4 V
VGS=0V, IS=7.0A
dIF/dt=100A/μs (note 4)
- 315 - ns
- 2.6 - μC
æ大
符å·
åä½
Max
Symbol
Unit
JCS8N60CB JCS8N60FB
Rth(j-c)
0.85
2.6
â/W
Rth(j-A)
62.5
62.5
â/W
注éï¼
1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
2ï¼L=19.5mH, IAS=7.0A, VDD=50V, RG=25 â¦,èµ·å§
ç»æ¸© TJ=25â
3ï¼ISD â¤7.0A,di/dt â¤300A/μs,VDDâ¤BVDSS,èµ·å§ç»æ¸©
TJ=25â
4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1 ï¼ Pulse width limited by maximum junction
temperature
2ï¼L=19.5mH, IAS=7.0A, VDD=50V, RG=25 â¦,Starting
TJ=25â
3 ï¼ ISD â¤7.0A,di/dt â¤300A/μs,VDDâ¤BVDSS, Starting
TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs,Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201007A
4/10
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