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JCS13N50CT Datasheet, PDF (4/8 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switching mode power supply | |||
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çµç¹æ§ ELECTRICAL CHARACTERISTICS
JCS13N50CT
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符å·
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æå° å
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Parameter
Symbol
Tests conditions
Min Typ Max Units
å¼å
³ç¹æ§ Switching âCharacteristics
延è¿æ¶é´ Turn-On delay time
ä¸åæ¶é´ Turn-On rise time
td(on) VDD=250V,ID=15A,RG=25â¦
tr
ï¼note 4ï¼5ï¼
- 90 180 ns
- 160 270 ns
延è¿æ¶é´ Turn-Off delay time
td(off)
- 150 260 ns
ä¸éæ¶é´ Turn-Off Fall time
æ
æçµè·æ»é Total Gate Charge
æ
ï¼æºçµè· Gate-Source charge
æ
ï¼æ¼çµè· Gate-Drain charge
tf
Qg
VDS =400V ,
Qgs
ID=15A
Qgd
VGS =10Vï¼note 4ï¼5ï¼
- 60 140 ns
- 37 50 nC
- 10.9 - nC
- 17.2 - nC
æ¼ï¼æºäºæ管ç¹æ§åæ大é¢å®å¼ Drain-Source Diode Characteristics and Maximum Ratings
æ£åæ大è¿ç»çµæµ
Maximum Continuous Drain-Source
Diode Forward Current
æ£åæ大èå²çµæµ
IS
- - 15 A
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
æ£åæ大è¿ç»çµæµ
- - 60 A
Maximum Continuous Drain-Source VSD VGS=0V, IS=15A
-
Diode Forward Current
ååæ¢å¤æ¶é´
Reverse recovery time
ååæ¢å¤çµè·
Reverse recovery charge
trr
VGS=0V, IS=15A
410
Qrr
dIF/dt=100A/μs (note 4)
4.5
çç¹æ§ THERMAL CHARACTERISTIC
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Parameter
符å·
Symbol
æ大å¼
Value
JCS13N50CT
ç»å°ç®¡å£³ççé»
Thermal Resistance, Junction to Case
Rth(j-c)
0.72
ç»å°ç¯å¢ççé»
Rth(j-A)
62.5
Thermal Resistance, Junction to Ambient
1.4 V
ns
μC
åä½
Unit
â/W
â/W
注 1ï¼èå²å®½åº¦ç±æé«ç»æ¸©éå¶
注 2ï¼L=9.0mH, IAS=15A, VDD=50V, RG=25 â¦,èµ·å§
ç»æ¸© TJ=25â
注 3ï¼ISD â¤15A,di/dt â¤200A/μs, VDDâ¤BVDSS,èµ·å§ç»
温 TJ=25â
注 4ï¼èå²æµè¯ï¼èå²å®½åº¦â¤300μs,å 空æ¯â¤2ï¼
注 5ï¼åºæ¬ä¸å·¥ä½æ¸©åº¦æ å
³
Notes:
1ï¼Pulse width limited by maximum junction temperature
2ï¼L=9.0mH, IAS=15A, VDD=50V, RG=25 â¦,Starting TJ=25â
3ï¼ISD â¤15A,di/dt â¤200A/μs, VDDâ¤BVDSS, Starting TJ=25â
4ï¼Pulse Testï¼Pulse Width â¤300μs, Duty Cycleâ¤2ï¼
5ï¼Essentially independent of operating temperature
çæ¬ï¼201410A
4/8
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