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T0810NUP Datasheet, PDF (3/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – AC switching | |||
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T0810NUP
çµç¹æ§ ELECTRICAL CHARACTERISTIC (TC=25â)
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Parameter
Symbol
Condition
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Peak Repetitive Blocking IDRM VDM=VDRM, Tj=150â,
Current
gate open
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Peak on-state voltage VTM ITM=11.3A
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Min Typ Max Unit
-
- 1.0 mA
-- 1.3 1.55 V
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Gate trigger current
MT1(-),MT2(+),G(+) 5
VDM=12V,
IGT RL=100Ω MT1(-),MT2(+),G(-)
5
MT1(+),MT2(-),G(-) 9
- 15 mA
- 15 mA
- 15 mA
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Gate trigger voltage
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Holding current
MT1(-),MT2(+),G(+) 0.5 0.7 1.0 V
VDM=12V,
VGT RL=100Ω MT1(-),MT2(+),G(-) 0.5 0.7 1.5
V
MT1(+),MT2(-),G(-) 0.5 0.7 1.5 V
IH VDM=12V, IGT=0.1A
-
- 20 mA
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Latching current
MT1(-),MT2(+),G(+) -
-
VDM=12V,
IL
MT1(-),MT2(+),G(-) -
-
IGT=0.1A
MT1(+),MT2(-),G(-) -
-
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VDM=67% VDRM(MAX),
Rise of off- state voltage
dV/dt
Tj=150â, gate open
500 -
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ITM=6A, VDM=VDRM(MAX),
controlled turn-on time
tgt
IG=0.1A, dIG/dt=5A/μS
-2
çç¹æ§ THERMAL CHARACTERISTIC
30 mA
30 mA
30 mA
- V/μs
- μs
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Parameter
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Thermal resistance
junction to mounting base
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Symbol
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Condition
Rth(j-mb) full cycle(TO-220HF)
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¸å æ大 åä½
Min Typ Max Unit
2.0 â/W
çæ¬ï¼201506A
3/6
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