|
3FT4C Datasheet, PDF (3/9 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – AC switching | |||
|
◁ |
R
3FT4C/F/M/U
çµç¹æ§ ELECTRICAL CHARACTERISTIC (TC=25â)
项ç®
符å·
æµè¯æ¡ä»¶
æå°
Parameter
Symbol
Condition
Min
å³°å¼éå¤ææçµæµ
VDM=VDRM, Tj=25â, gate open -
Peak Repetitive Blocking IDRM
Current
VDM=VDRM, Tj=125â, gate open -
å³°å¼éæçµå
Peak on-state voltage VTM ITM=5A
-
å
¸å
Typ
-
-
-
æ大
Max
10
0.5
1.7
åä½
Unit
μA
mA
V
é¨æ触åçµæµ
Gate trigger current
MT1(-),MT2(+),G(+) -
VDM=12V, MT1(-),MT2(+),G(-) -
IGT RL=100Ω MT1(+),MT2(-),G(-)
-
- 10 mA
- 10 mA
- 10 mA
MT1(+),MT2(-),G(+) -
- 45 mA
MT1(-),MT2(+),G(+) -
é¨æ触åçµå
Gate trigger voltage
VDM=12V, MT1(-),MT2(+),G(-) -
VGT RL=100Ω MT1(+),MT2(-),G(-)
-
ç»´æçµæµ
Holding current
æä½çµæµ
Latching current
MT1(+),MT2(-),G(+) -
IH VDM=12V, IGT=0.1A
-
IL VDM=12V,IGT=0.1A
-
ææ临ççµåä¸åç
VDM=67% VDRM(MAX),
Rise of off- state voltage
dV/dt
Tj=125â, gate open
-
é¨ æ å¼ é æ¶ é´ Gate
ITM=6A, VDM=VDRM(MAX),
controlled turn-on time
tgt
IG=0.1A, dIG/dt=5A/μS
-
- 1.5 V
- 1.5 V
- 1.5 V
- 2.0 V
- 15 mA
- 30 mA
50 - V/μs
2
- μs
çç¹æ§ THERMAL CHARACTERISTIC
项ç®
Parameter
ç»å°ç®¡å£³ççé»
Thermal resistance
junction to case
符å·
æ¡ä»¶
Symbol
Condition
full cycle
Rth(j-c) (TO-220C/TO-126/TO-252)
full cycle(TO-220HF)
æå° å
¸å æ大 åä½
Min Typ Max Unit
3.0 â/W
5.5 â/W
çµç»ç¼ç¹æ§ ELECTRICAL ISOLATION
项ç®
Parameter
ç»ç¼çµå
Isolation voltage
符å·
Symbol
æ¡
件
Condition
VISOL 1 minute, leads to mounting tab TO-220HF
æ° å¼ åä½
Value Unit
2000 V
çæ¬ï¼201510J
3/9
|
▷ |