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| 2SA1941 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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R
2SA1941
ELECTRICAL CHARACTERISTICS (curves)
IC-VCE
hFE â IC
Common emitter Tc = 25°C
Single pulse test
Tc=100
Tc=25
Collector-emitter voltage VCE (V)
VCE(sat)- IC
Common emitter
VCE = -5 V Single pulse test
Collector corrent IC (A)
VBE(sat)- IC
Tc=100
Tc=25
Common emitter
IC/IB = 10
Single pulse test
Collector corrent IC (A)
PC-TC
Tc=25
Tc=100
Common emitter
IC/IB = 10
Single pulse test
Collector corrent IC (A)
SOA
Infinite heat sink
Ambient temperature TC
201311C
TC=25 DC Operation
1ms
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
10ms
100ms
Collector-emitter voltage VCE (V)
3/5
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