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TIP42C Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) | |||
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R
çµç¹æ§ ELECTRICAL CHARACTERISTIC
TIP42C
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Parameter
Tests conditions
Value(min) Value(typ) Value(max) Unit
VCEO(sus) Ic=-30mA,IB=0
-100
-
V
ICES
VCE=-100V,VEB=0
-
-
-400
μA
ICEO
VCE=-60V,IB=0
-
-
-0.7
mA
IEBO
VEB=-5V,IC=0
-
-
-1
mA
hFE*
VCE=-4V,IC=-0.3A
VCE=-4V,IC=-3.0A
30
-
15
75
-
VCE(sat)*
IC=-6.0A,IB=-0.6A
-
-1.5
V
VBE(sat)*
IC=-6.0A,IB=-0.6A
-
-2.0
V
fT
VCE=-10V, Ic=-0.5A,f=1MHz
3.0
-
*Pulse Test: PWâ¤300ms, Duty Cycleâ¤2%
-
MHz
ç¹å¾æ²çº¿ ELECTRICAL CHARACTERISTICS (curves)
hFE â IC
VCE(sat)- IC
Tc=100â
Tc=25â
Common emitter
VCE = -5 V Single
Common emitter
IC/IB = 10
Single pulse test
Tc=100â
Tc=25â
Collector corrent IC (A)
PC-TC
Collector corrent IC (A)
SOA
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
TC=25â DC Operation
Ambient temperature TCï¼âï¼
çæ¬ï¼201403C
Collector-emitter voltage VCE (V)
2/4
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