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TIP42C Datasheet, PDF (2/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)
R
电特性 ELECTRICAL CHARACTERISTIC
TIP42C
项目
测试条件
最小值 典型值 最大值
单位
Parameter
Tests conditions
Value(min) Value(typ) Value(max) Unit
VCEO(sus) Ic=-30mA,IB=0
-100
-
V
ICES
VCE=-100V,VEB=0
-
-
-400
μA
ICEO
VCE=-60V,IB=0
-
-
-0.7
mA
IEBO
VEB=-5V,IC=0
-
-
-1
mA
hFE*
VCE=-4V,IC=-0.3A
VCE=-4V,IC=-3.0A
30
-
15
75
-
VCE(sat)*
IC=-6.0A,IB=-0.6A
-
-1.5
V
VBE(sat)*
IC=-6.0A,IB=-0.6A
-
-2.0
V
fT
VCE=-10V, Ic=-0.5A,f=1MHz
3.0
-
*Pulse Test: PW≤300ms, Duty Cycle≤2%
-
MHz
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
hFE – IC
VCE(sat)- IC
Tc=100℃
Tc=25℃
Common emitter
VCE = -5 V Single
Common emitter
IC/IB = 10
Single pulse test
Tc=100℃
Tc=25℃
Collector corrent IC (A)
PC-TC
Collector corrent IC (A)
SOA
Single nonrepetitive pulse Tc = 25°C
Curves must be derated linear
with increase in temperature.
TC=25℃ DC Operation
Ambient temperature TC(℃)
版本:201403C
Collector-emitter voltage VCE (V)
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