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| SBL1045 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Low voltage, high frequency rectifier | |||
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èç¹åºå¿åäºæ管
R
SCHOTTKY BARRIER DIODE
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ大ç´æµé»æçµå
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµTC=100â
Average Rectified Forward Current
æ£åå³°å¼æµªæ¶çµæµ
Symbol
VRRM
VDC
IF(AV)
Surge non repetitive forward current
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
IFSM
8.3 ms single half-sine-wave (JEDEC Method)
ç´æµçµæµæ ååååæ£åç»æ¸©åº¦
Junction temperature in DC forward current
without reverse bias
å·¥ä½ç»æ¸©åå¨å温度èå´
Storage temperature range
注æï¼
TJ(1)
TSTG
(1) 符å IEC 61215 ç 2 æè·¯äºæ管çè¯éªè¦æ±
æ°å¼
Value
45
45
10
180
â¤200
-55~+150
åä½
Unit
V
V
A
A
â
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
æµè¯æ¡ä»¶
å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(typ) Value(max)
IR
Tj =25â
Tj =125â
VR=VRRM
VR=VRRM
0.15
7
0.2
10
VF
Tj =25â
IF=5A
0.40
ââ
Tj =25â
IF=10A
0.45
0.52
Tj =125â
IF=5A
0.35
ââ
Tj =125â
IF=10A
0.38
0.45
CJ
4V 1MHz
800
ââ
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
æå°å¼
Parameter
ç»å°ç®¡å£³ççé»
Symbol Value(min)
Thermal resistance from
Rth(j-c)
ââ
junction to case
ç»å°ç¯å¢ççé»
SMP
Thermal resistance from
Rth(j-a)
ââ
junction to ambient
åä½
Unit
mA
V
pF
æå¤§å¼ å ä½
Value(max) Unit
10
â /W
200
çæ¬(Rev.)ï¼201402B
2/6
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