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| HBR20S45 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switch power supply | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ大ç´æµé»æçµå
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµ
Average forward current
TC=150â
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Maximum junction temperature
å¨å温度
Storage temperature range
HBR20S45
符å·
Symbol
VRRM
æ°å¼
Value
45
åä½
Unit
V
VDC
45
V
IF(AV)
20
A
IFSM
300
A
Tj
175
â
TSTG
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
Parameter
æµè¯æ¡ä»¶
Tests conditions
æå°å¼ å
¸åå¼
æ大å¼
Value(min) Value(typ) Value(max)
åä½
Unit
Tj =25â
IR
Tj =125â
Tj =25â
Tj =125â
VF
Tj =25â
Tj =125â
VR=VRRM
IF=10A
IF=20A
25
μA
5
mA
0.52
0.57
V
0.44
0.48
V
0.59
0.67
V
0.54
0.58
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
Parameter
ç»å°ç®¡å£³ççé»
Thermal resistance from
junction to case
TO-220
TO-262
符å·
æå°å¼
æå¤§å¼ å ä½
Symbol Value(min) Value(max) Unit
Rth(j-c)
1.7
â /W
1.7
çæ¬(Rev):201503B
2/6
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