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| HBR20150 Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – SCHOTTKY BARRIER DIODE | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ大ç´æµé»æçµå
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµ TC=150â
Average forward (TO-220)
current
TC=125â
(TO-220F
æ´ä¸ªå¨ä»¶
per device
å侧
Symbol
VRRM
VDC
IF(AV)
TO-220HF)
æ£åå³°å¼æµªæ¶çµæµ
per diode
Surge non repetitive forward current
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
IFSM
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Maximum junction temperature
å¨å温度
Storage temperature range
Tj
TSTG
HBR20150
æ°å¼
Value
150
åä½
Unit
V
150
V
20
A
10
150
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
Tj =25â
10
IR
Tj =125â
VR=VRRM
5
Tj =25â
VF
Tj =125â
IF=10A
0.83
0.9
0.68
0.75
åä½
Unit
μA
mA
V
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
ç»å°ç®¡å£³ççé»
Thermal resistance from
junction to case
TO-220
TO-220F
TO-220HF
Rth(j-c)
æå°å¼
æå¤§å¼ å ä½
Value(min) Value(max) Unit
2.2
3.0
â /W
3.0
çæ¬(Rev.)ï¼201002I
2/7
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