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| HBR20100U Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switch power supply | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
Symbol
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
VRRM
æ大ç´æµé»æçµå
VDC
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµ TC=150â
Average forward (TO-220)
æ´ä¸ªå¨ä»¶
per device
current
TC=125â
(TO-220HF) å 侧
IF(AV)
per diode
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
IFSM
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Tj
Maximum junction temperature
å¨å温度
Storage temperature range
TSTG
HBR20100U
æ°å¼
ValuU
100
åä½
Unit
V
100
V
20
A
10
200
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
Parameter
æµè¯æ¡ä»¶
Tests conditions
æå°å¼ å
¸åå¼
æ大å¼
Value(min) Value(typ) Value(max)
Tj =25â
20
IR
VR=VRRM
Tj =125â
5
Tj =25â
IF=10A
Tj =125â
VF
Tj =25â
IF=15A
Tj =125â
0.69
0.73
0.57
0.62
0.75
0.80
0.62
0.70
åä½
Unit
μA
mA
V
V
V
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
ç»å°ç®¡å£³ççé»
Thermal resistance from
junction to case
TO-220
TO-220B
TO-220HF
Rth(j-c)
æå°å¼
æå¤§å¼ å ä½
Value(min) Value(max) Unit
1.9
1.9
â /W
2.5
çæ¬(Rev.)ï¼201404B
2/7
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