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| HBR20100D Datasheet, PDF (2/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switch power supply | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
Symbol
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
VRRM
æ大ç´æµé»æçµå
VDC
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµ TC=150â
Average forward (TO-220/263/
æ´ä¸ªå¨ä»¶
per device
current
262/IPAK/DPAK)
TC=125â
(TO-220HF)
å侧
per diode
IF(AV)
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
IFSM
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Tj
Maximum junction temperature
å¨å温度
Storage temperature range
TSTG
HBR20100D
æ°å¼
Value
100
åä½
Unit
V
100
V
20
A
10
180
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
Parameter
æµè¯æ¡ä»¶
Tests conditions
æå°å¼ å
¸åå¼
æ大å¼
Value(min) Value(typ) Value(max)
åä½
Unit
Tj =25â
IR
VR=VRRM
Tj =125â
10
μA
5
mA
Tj =25â
VF
IF=10A
Tj =125â
0.80
0.85
V
0.67
0.72
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
TO-220
TO-263
ç»å°ç®¡å£³ççé»
Thermal resistance from
TO-262
IPAK
Rth(j-c)
junction to case
DPAK
TO-220HF
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
1.9
1.9
1.9
â /W
2.3
2.3
2.5
çæ¬(Rev.)ï¼201312A
2/10
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