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| HBR16200 Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – SCHOTTKY BARRIER DIODE | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ大ç´æµé»æçµå
Maximum DC blocking voltage
æ£åå¹³åæ´æµçµæµ TC=150â
Average forward (TO-220C)
æ´ä¸ªå¨ä»¶
per device
Symbol
VRRM
VDC
current
TC=125â
(TO-220F,
å侧
per diode
IF(AV)
TO-220HF)
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
IFSM
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Maximum junction temperature
å¨å温度
Storage temperature range
Tj
TSTG
HBR16200
æ°å¼
Value
200
åä½
Unit
V
200
V
16
A
8
120
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
Tj =25â
10
IR
Tj =125â
VR=VRRM
6
Tj =25â
VF
Tj =125â
IF=8A
0.83
0.93
0.68
0.75
åä½
Unit
μA
mA
V
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
ç»å°ç®¡å£³ççé»
Thermal resistance from
junction to case
TO-220C
TO-220F
TO-220HF
Rth(j-c)
æå°å¼
æå¤§å¼ å ä½
Value(min) Value(max) Unit
3.0
3.5
â /W
3.5
çæ¬(Rev.)ï¼201003G
2/7
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