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| HBR10100S Datasheet, PDF (2/10 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – High frequency switch power supply | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
Symbol
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
VRRM
æ大ç´æµé»æçµå
Maximum DC blocking voltage
VDC
æ£åå¹³åæ´æµçµæµ TC=150â
æ´ä¸ªå¨ä»¶
Average forward (TO-220/263/262/ per device
current
IPAKM/DPAKM)
TC=125â
(TO-220HF)
å侧
per diode
IF(AV)
æ£åå³°å¼æµªæ¶çµæµ
Surge non repetitive forward current
ï¼é¢å®è´è½½ 8.3ms åæ£å¼¦æ³¢âæ JEDEC æ¹æ³ï¼
IFSM
8.3 ms single half-sine-wave (JEDEC Method)
æé«ç»æ¸©
Maximum junction temperature
Tj
å¨å温度
Storage temperature range
TSTG
HBR10100S
æ°å¼
Value
100
åä½
Unit
V
100
V
10
A
5
85
A
175
â
-40~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
IR
Tests conditions
Tj =25â
Tj =125â
VR=VRRM
Value(min) Value(typ) Value(max)
10
5
Tj =25â
Tj =125â
IF=5A
VF
Tj =25â
Tj =125â
IF=10A
0.77
0.83
0.64
0.7
0.86
0.9
0.73
0.8
åä½
Unit
µA
mA
V
V
V
V
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
TO-220
ç»å°ç®¡å£³ççé»
Thermal resistance from
TO-263
TO-262
IPAKM
Rth(j-c)
junction to case
DPAKM
TO-220HF
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
1.9
1.9
1.9
â /W
2.3
2.3
2.5
çæ¬(Rev.)ï¼201507C
2/10
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