DB805D Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Compact fluorescent lamp (CFL) 220 V mains

R
ABSOLUTE RATINGS (Tc=25 )
DB805D
—
—
—
pu饱se
Parameter
Symbol
Value
Unit
Collector- Emitter Voltage VBE=0
Collector- Emitter Voltage IB=0
Emitter-Base Voltage
Collector Current DC
Collector Current pulse
Base Current DC 不
Base Current pulse 不
Total Dissipation ( Tamb = 25 °C single transistor )
Total Dissipation ( Tcase = 25 °C single transistor )
Total Dissipation (TO-220C/262/263)
Junction Temperature
VCES
VCEO
VEBO
IC
ICP
IB
IBP
PTOT
PTOT
PC
Tj
700
V
400
V
9
V
4
A
8
A
2
A
4
A
3
W
45
W
75
W
150
Storage Temperature
Tstg
-55~+150
5高s
不不不Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
ElECTRICAL CHARACTERISTIC
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
Hfe(1)
Hfe(2)
VCE(sat)
VBE(sat)
tf
ts
fT
Tests conditions
IC=10mA,IB=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=700V, IE=0
VCE=400V,IB=0
VEB=9V, IC=0
VCE =10V, IC=500mA
VCE =5V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.5A
VCC=24V IC=2A,IB1=-IB2=0.4A
VCE=10V, IC=0.5A
Value(min)
400
700
9
-
-
-
20
5
-
-
-
-
4
Value(typ)
-
-
-
-
-
-
-
-
-
-
-
-
-
Value(max)
-
-
-
100
50
10
30
-
1.0
1.8
0.7
5
-
THERMAL CHARACTERISTIC
Unit
V
V
V
µA
µA
µA
V
V
µS
µS
MHz
Parameter
商在
Thermal Resistance Junction Ambient (single transistor)
()
Thermal Resistance Junction Case (single transistor)
Symbol Value(min) Value(max) Unit
Rth(j-c)
-
42
℃ /W
Rth(j-c)
-
2.7
℃ /W
201311A
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