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| 8F120C Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – FAST RECOVER DIODE | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ£åå¹³åæ´æµçµæµ
TBCB=100â
Average forward
(TO-220C2L)
Symbol
VRRM
IF(AV)
current
å³°å¼åèå²æµªæ¶çµæµ
Peak one Cycle Surge Forward
IFSM
Current(Non-Repetitive) t=10ms
ç»æ¸©
Junction Temperature
å¨å温度
Storage temperature range
Tj
TSTG
8F120C
æ°å¼
Value
1200
åä½
Unit
V
8
A
150
A
-55~+150
â
-55~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS (Tc=25â unless otherwise specified)
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
VRRM
IR =50μA
1200
IR
Tj =25â
VR=VRRM
50
Tj =125â
200
VF
Tj =25â
IF=8A
Tj =125â
2.1
3.5
1.8
3.2
IF=1A, VR=30V, diF/dt=-200A/μs
35
50
trr
Tj =25â IF=8A
90
Tj =125â VR=100V
diF/dt=-200A/μs
150
åä½
Unit
V
μA
μA
V
V
ns
ns
ns
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
Symbol
ç»å°ç®¡å£³ççé»
Thermal resistance from TO-220C2L
Rth(j-c)
junction to case
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
3.0
â/W
çæ¬ï¼201008A
2/5
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