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| 40F30W Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – FAST RECOVERY DIODE | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ£åå¹³åæ´æµçµæµ
Average forward current
ä¸å¯éå¤æµªæ¶æ£åçµæµ
TBCB=110â
Symbol
VRRM
IF(AV)
Surge non repetitive Forward Current
IFSM
TC=45â tP=10ms,sine halfwave
ç»æ¸©
Tj
Junction Temperature
å¨å温度
TSTG
Storage temperature range
40F30W
æ°å¼
Value
300
åä½
Unit
V
40
A
400
A
-55~+175
â
-55~+175
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS (Tc=25â unless otherwise specified)
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
VRRM
IR =50μA
300
IR
Tj =25â
VR=VRRM
20
Tj =125â
250
VF
Tj =25â
IF=40A
Tj =125â
1.2
1.5
1.0
trr
IF=1A, VR=30V, diF/dt=-200A/μs
30
60
åä½
Unit
V
μA
μA
V
V
ns
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
符å·
Parameter
ç»å°ç®¡å£³ççé»
Symbol
Thermal resistance from
TO-247
Rth(j-c)
junction to case
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
0.7
â/W
çæ¬ï¼200912A
2/5
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