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| 3DD5040 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY | |||
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R
ABSOLUTE RATINGS (Tc=25 )
3DD5040
Parameter
â
CollectorâBase Voltage
â
CollectorâEmitter Voltage
â
EmitterâBase Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
BVCBO
1700
V
BVCEO
750
V
BVEBO
6
V
IC
22
A
ICP
44
IB
11
A
PC
75
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
tf
ts
ft
Tests conditions
IC=10mA,IB=0
IC=1mA,IE=0
IE=1mA,IC=0
VCB=1500V, IE=0
VEB=6V, IC=0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 11 A
IC=11A, IB=2.75A
IC=11A, IB=2.75A
IC=10A,2IB1=-IB2=5A
fH=15.75kHz
VCE=10V, IC=0.1A
Min
Max
750
1700
6
1
10
20
60
5
3
1.3
0.3
3.5
2
Unit
V
V
V
mA
µA
V
V
µs
µs
MHz
200911E
2/6
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