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| 3DD5032 Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY | |||
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R
ABSOLUTE RATINGS (Tc=25 )
3DD5032
Parameter
â
CollectorâBase Voltage
â
CollectorâEmitter Voltage
â
EmitterâBase Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage temperature range
Symbol
Value
Unit
BVCBO
1500
V
BVCEO
600
V
BVEBO
6
V
IC
8
A
ICP
16
IB
4
A
PC
50
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
-VF
tf
ts
ft
Tests conditions
IC=1mA,IE=0
IE=400mA,IC=0
VCB=1500V, IE=0
VEB=4V, IC=0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 5 A
IC=4.5A, IB=0.9A
IC=4.5A, IB=0.9A
IF=5A
IC=4.5A,2IB1=-IB2=1.8A
fH=15.75kHz
VCE=10V, IC=0.1A
Min
Max
Unit
1500
V
6
V
1
mA
40
150
mA
10
30
5
3
V
1.5
V
2
V
1
µs
9
µs
1.7
MHz
200911G
2/7
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