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3DD5017 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY
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ABSOLUTE RATINGS (Tc=25 )
3DD5017
Parameter
—
Collector−Base Voltage
—
Collector−Emitter Voltage
—
Emitter−Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
BVCBO
1200
V
BVCEO
650
V
BVEBO
6
V
IC
12
A
ICP
24
IB
6
A
PC
50
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
tf
ts
ft
Tests conditions
IC=10mA,IB=0
IC=1mA,IE=0
IE=1mA,IC=0
VCB=1200V, IE=0
VEB=6V, IC=0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 5 A
IC=5A, IB=1A
IC=5A, IB=1A
IC=6A,2IB1=-IB2=2.4A
fH=15.75kHz
VCE=10V, IC=0.1A
Min
Max
650
1200
6
1
10
15
35
7
0.5
1.3
0.3
3.5
2
Unit
V
V
V
mA
µA
V
V
µs
µs
MHz
200911E
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