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3DD4210 Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
3DD4210
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Parameter
Symbol Value
Unit
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼VBE=0ï¼ VCES
800
V
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼IB=0ï¼ VCEO
åå°æâåºæç´æµçµå Emitter-Base Voltage
VEBO
500
V
9
V
æ大éçµæç´æµçµæµ
Collector Currentï¼DCï¼
IC
10
A
æ大éçµæèå²çµæµ
Collector Currentï¼pulseï¼
ICP
20
A
æ大åºæç´æµçµæµ
Base Currentï¼DCï¼
IB
5
A
æ大åºæèå²çµæµ
Base Currentï¼pulseï¼
IBP
10
A
æ大éçµæèæ£åç
Total Dissipation (TO-220C)
PC
100
W
æé«ç»æ¸©
Junction Temperature
Tj
150
â
è´®å温度
Storage Temperature
Tstg
-55~+150 â
注ï¼pulseçµæµå®½åº¦ä¸ºå°äº5msçééå¤åèå²ã Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
çµç¹æ§ ElECTRICAL CHARACTERISTIC
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æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼ æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IC=10mA,IB=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=800V, IE=0
VCE=500V,IB=0
500
-
-
800
-
-
9
-
-
-
-
100
-
-
50
IEBO
Hfe(1)
Hfe(2)
VEB=9V, IC=0
VCE =5V, IC=5A
VCE =5V, IC=8A
-
-
10
8
-
40
5
-
-
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
IC=5A, IB=1A
IC=10A, IB=2A
IC=5A, IB=1A
-
-
1.2
-
-
2.2
-
-
1.6
tf
VCC=24V IC=5A,IB1=-IB2=1A
ts
-
-
0.9
-
-
3
fT
VCE=10V, IC=0.5A
4
-
-
åä½
Unit
V
V
V
μA
μA
μA
V
V
V
μS
μS
MHz
çç¹æ§ THERMAL CHARACTERISTIC
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Parameter
ç»å°ç®¡å£³ççé» TO-220C
Thermal Resistance Junction Case TO-220C
符 å· æå°å¼ æ大å¼
Symbol Value(min) Value(max)
åä½
Unit
Rth(j-c)
-
1.25
â /W
çæ¬ï¼200910C
2/5
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