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3DD4203D Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
3DD4203D
项ç®
ç¬¦å· æ°å¼ åä½
Parameter
Symbol Value
Unit
éçµæâåå°æç´æµçµå
éçµæâåå°æç´æµçµå
åå°æâåºæç´æµçµå
æ大éçµæç´æµçµæµ
æ大éçµæèå²çµæµ
Collector- Emitter Voltageï¼VBE=0ï¼ VCES
Collector- Emitter Voltageï¼IB=0ï¼ VCEO
Emitter-Base Voltage
VEBO
Collector Currentï¼DCï¼
IC
Collector Currentï¼pulseï¼
ICP
700
V
400
V
9
V
2.0
A
4.0
A
æ大éçµæèæ£åç
Total Dissipation (TO-92)
PC
æ大éçµæèæ£åç
Total Dissipation (TO-251)
PC
æ大éçµæèæ£åç
Total Dissipation (TO-126(S))
PC
æ大éçµæèæ£åç
Total Dissipation (TO-220)
PC
1
W
10
W
20
W
40
W
æé«ç»æ¸©
Junction Temperature
è´®å温度
Storage Temperature
çµç¹æ§ ElECTRICAL CHARACTERISTIC
Tj
150
â
Tstg
-55~+150 â
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼ æ大å¼
åä½
Parameter
Tests conditions
Value(min) Value(typ) Value(max) Unit
V(BR)CEO
IC=10mA,IB=0
V(BR)CBO
IC=1mA,IB=0
V(BR)EBO
IE=1mA,IC=0
ICBO
VCB=680V, IE=0
ICEO
VCE=400V,IB=0
IEBO
VEB=7V, IC=0
hFE
VCE=5V, IC=5mA
VCE=10V, IC=200mA
VCE(sat)
IC=0.5A, IB=0.1A
VBE(sat)
IC=0.5A, IB=0.1A
tf
VCC=24V IC=2A,IB1=-IB2=0.4A
ts
VCC=24V IC=2A,IB1=-IB2=0.4A
fT
VCE=10V, Ic=0.1A
çç¹æ§ THERMAL CHARACTERISTIC
项ç®
400
490
-
V
700
800
-
V
9
13
-
V
-
-
100
µA
-
-
50
µA
-
-
10
µA
6
16
40
-
10
20
30
-
-
0.18
0.8
V
-
0.9
1.2
V
-
-
0.7
µS
-
-
4
µS
4
-
-
MHz
符 å· æå°å¼ æå¤§å¼ å ä½
Parameter
ç»å°ç¯å¢ççé» TO-92
Thermal Resistance Junction Case
ç»å°ç®¡å£³ççé» TO-251
Thermal Resistance Junction Case
ç»å°ç®¡å£³ççé» TO-126(S)
Thermal Resistance Junction Case
ç»å°ç®¡å£³ççé» TO-220
Thermal Resistance Junction Case
TO-92
TO-251
TO-126(S)
TO-220
Symbol Value(min) Value(max)
Rth(j-a)
-
125
Rth(j-c)
-
12.5
Rth(j-c)
-
6.25
Rth(j-c)
-
3.125
Unit
â /W
â /W
â /W
â /W
çæ¬ï¼201002G
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