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3DD4202BD Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
3DD4202BD
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Parameter
Symbol Value
Unit
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼VBE=0ï¼ VCES
700
V
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼IB=0ï¼ VCEO
400
V
åå°æâåºæç´æµçµå Emitter-Base Voltage
VEBO
9
V
æ大éçµæç´æµçµæµ
Collector Currentï¼DCï¼
IC
1.5
A
æ大éçµæèå²çµæµ
Collector Currentï¼pulseï¼
ICP
3.0
A
æ大éçµæèæ£åç
Total Dissipation (TO-92)
PC
1
W
æ大éçµæèæ£åç
Total Dissipation (TO-251)
PC
10
W
æ大éçµæèæ£åç
Total Dissipation (TO-126)
PC
20
W
æé«ç»æ¸©
Junction Temperature
Tj
150
â
è´®å温度
Storage Temperature
çµç¹æ§ ElECTRICAL CHARACTERISTIC
Tstg
-55~+150 â
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åä½
Parameter
Tests conditions
Value(min) Value(typ) Value(max) Unit
V(BR)CEO
IC=10mA,IB=0
V(BR)CBO
IC=1mA,IB=0
V(BR)EBO
IE=1mA,IC=0
ICBO
VCB=680V, IE=0
ICEO
VCE=400V,IB=0
IEBO
VEB=7V, IC=0
hFE
VCE=5V, IC=5mA
VCE=5V, IC=100mA
VCE(sat)
IC=0.5A, IB=0.1A
VBE(sat)
IC=0.5A, IB=0.1A
tf
VCC=24V IC=2A,IB1=-IB2=0.4A
ts
VCC=24V IC=2A,IB1=-IB2=0.4A
fT
VCE=10V, Ic=0.1A
çç¹æ§ THERMAL CHARACTERISTIC
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400
490
-
V
700
800
-
V
9
13
-
V
-
-
100
μA
-
-
50
μA
-
-
10
μA
6
16
40
-
8
20
40
-
-
0.18
0.8
V
-
0.9
1.2
V
-
-
0.7
μS
-
-
4
μS
4
-
-
MHz
符 å· æå°å¼ æå¤§å¼ å ä½
Parameter
ç»å°ç¯å¢ççé» TO-92
Thermal Resistance Junction Case
ç»å°ç®¡å£³ççé» TO-251
Thermal Resistance Junction Case
ç»å°ç®¡å£³ççé» TO-126
Thermal Resistance Junction Case
TO-92
TO-251
TO-126
Symbol Value(min) Value(max)
Rth(j-a)
-
125
Rth(j-c)
-
12.5
Rth(j-c)
-
6.25
Unit
â /W
â /W
â /W
çæ¬ï¼200910D
2/6
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