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3DD4125DT Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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3DD4125DTã3DD4125DM
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
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Parameter
Symbol Value
Unit
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼VBE=0ï¼ VCES
350
V
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼IB=0ï¼ VCEO
200
V
åå°æâåºæç´æµçµå Emitter-Base Voltage
VEBO
7
V
æ大éçµæç´æµçµæµ
Collector Currentï¼DCï¼
IC
3
A
æ大éçµæèå²çµæµ
Collector Currentï¼pulseï¼
ICP
6
A
æ大åºæç´æµçµæµ
Base Currentï¼DCï¼
IB
1
A
æ大åºæèå²çµæµ
Base Currentï¼pulseï¼
IBP
2
A
æ大éçµæèæ£åç
Total Dissipation (D4125DT)
PC
1
W
æ大éçµæèæ£åç
Total Dissipation (D4125DM)
PC
40
W
æé«ç»æ¸©
Junction Temperature
Tj
150
â
è´®å温度
Storage Temperature
Tstg
-55~+150 â
注ï¼pulseçµæµå®½åº¦ä¸ºå°äº5msçééå¤åèå²ã Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
çµç¹æ§ ElECTRICAL CHARACTERISTIC
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¸åå¼ æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
Hfe(1)
Hfe(2)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
tf
ts
IC=10mA,IB=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=350V, IE=0
VCE=200V,IB=0
VEB=7V, IC=0
VCE =5V, IC=0.2A
VCE =5V, IC=2A
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A
VCC=24V IC=0.5A,IB1=-IB2=0.1A
200
-
-
350
-
-
7
-
-
-
-
100
-
-
50
-
-
10
8
-
50
5
-
-
-
-
0.8
-
-
1.0
-
-
1.5
-
-
0.7
-
-
4
fT
VCE=10V, IC=0.5A
çç¹æ§ THERMAL CHARACTERISTIC
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4
-
-
符 å· æå°å¼ æ大å¼
Parameter
ç»å°ç®¡å£³ççé» D4125DT
Thermal Resistance Junction Case D4125DT
ç»å°ç®¡å£³ççé» D4125DM
Thermal Resistance Junction Case D4125DM
Symbol Value(min) Value(max)
Rth(j-c)
-
125
Rth(j-c)
-
3.125
åä½
Unit
V
V
V
μA
μA
μA
V
V
V
μS
μS
MHz
åä½
Unit
â /W
â /W
çæ¬ï¼200910C
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