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3DD2553 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2553 FOR LOW FREQUENCY
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ABSOLUTE RATINGS (Tc=25 )
3DD2553
Parameter
—
Collector−Base Voltage
—
Collector−Emitter Voltage
—
Emitter−Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
BVCBO
1700
V
BVCEO
600
V
BVEBO
6
V
IC
8
A
ICP
16
IB
4
A
PC
50
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)CBO
V(BR)EBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
-VF
tf
ts
ft
Tests conditions
IC=1mA,IE=0
IE=400mA,IC=0
VCB=1700V, IE=0
VEB=5V, IC=0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 6 A
IC=6A, IB=1.2A
IC=6A, IB=1.2A
IF=8A
IC=6A,2IB1=-IB2=3A
fH=15.75kHz
VCE=10V, IC=0.1A
Min
Max
1700
6
1
66
200
10
30
5
4
1.5
2
0.7
12
1.7
Unit
V
V
mA
mA
V
V
V
µs
µs
MHz
200911C
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