3DD2109 Datasheet, PDF (2/6 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD2109 FOR LOW FREQUENCY

R
ABSOLUTE RATINGS (Tc=25 )
3DD2109
Parameter
—
Collector−Base Voltage
—
Collector−Emitter Voltage
—
Emitter−Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Max. Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
BVCBO
900
V
BVCEO
500
V
BVEBO
7
V
IC
7
A
ICP
14
IB
3.5
A
PC
50
W
Tj
150
TSTG
-55~+150
ELECTRICAL CHARACTERISTICS (Tc=25 )
Parameter
V(BR)_CEO
V(BR)_CBO
V(BR)_EBO
I_CBO
I_EBO
H_FE
V_CE(sat)
V_BE(sat)
tf
ts
ft
Tests conditions
I_C=10mA,I_B=0
I_C=1mA,I_E=0
I_E=1mA,I_C=0
V_CB=800V, I_E=0
V_EB=7V, I_C=0
V_CE = 5 V, I_C = 1 A
V_CE = 5 V, I_C = 5 A
I_C=3A, I_B=0.6A
I_C=3A, I_B=0.6A
I_C=4A,2I_B1=-I_B2=1.6A
f_H=15.75kHz
V_CE=10V, I_C=0.1A
Min
Max
500
900
7
100
100
15
35
7
0.5
1.3
0.3
3
4
Unit
V
V
V
µA
µA
V
V
µs
µs
MHz
200911C
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