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3DD13005 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR( NPN ) | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
3DD13005
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ç¬¦å· æ°å¼ åä½
Parameter
Symbol Value
Unit
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼VBE=0ï¼ VCES
700
V
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼IB=0ï¼ VCEO
åå°æâåºæç´æµçµå Emitter-Base Voltage
VEBO
400
V
9
V
æ大éçµæç´æµçµæµ
Collector Currentï¼DCï¼
IC
4
A
æ大éçµæèå²çµæµ
Collector Currentï¼pulseï¼
ICP
8
A
æ大åºæç´æµçµæµ
Base Currentï¼DCï¼
IB
2
A
æ大åºæèå²çµæµ
Base Currentï¼pulseï¼
IBP
4
A
æ大éçµæèæ£åç
Total Dissipation (TO-220)
PC
75
W
æé«ç»æ¸©
Junction Temperature
Tj
150
â
è´®å温度
Storage Temperature
Tstg
-55~+150 â
注ï¼pulseçµæµå®½åº¦ä¸ºå°äº5msçééå¤åèå²ã Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
çµç¹æ§ ElECTRICAL CHARACTERISTIC
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æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼ æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IC=10mA,IB=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=700V, IE=0
VCE=400V,IB=0
400
-
-
700
-
-
9
-
-
-
-
100
-
-
50
IEBO
Hfe(1)
Hfe(2)
VEB=9V, IC=0
VCE =10V, IC=500mA
VCE =5V, IC=2A
-
-
10
8
-
50
5
-
-
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
IC=1A,
IC=4A,
IC=4A,
IB=0.2A
IB=1A
IB=0.8A
-
-
1.0
-
-
2.0
-
-
1.8
ts
IC=0.5A,IB1 =0.1A
fT
VCE=10V, IC=0.5A
2
-
6
4
-
-
åä½
Unit
V
V
V
μA
μA
μA
V
V
V
μS
MHz
çç¹æ§ THERMAL CHARACTERISTIC
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Parameter
ç»å°ç®¡å£³ççé» TO-220
Thermal Resistance Junction Case TO-220
符 å· æå°å¼ æ大å¼
Symbol Value(min) Value(max)
åä½
Unit
Rth(j-c)
-
1.67
â /W
çæ¬ï¼201004A
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