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3DD13003A Datasheet, PDF (2/7 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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R
3DD13003A
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
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ç¬¦å· æ°å¼
Parameter
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼VBE=0ï¼
éçµæâåå°æç´æµçµå Collector- Emitter Voltageï¼IB=0ï¼
åå°æâåºæç´æµçµå Emitter-Base Voltage
æ大éçµæç´æµçµæµ
Collector Currentï¼DCï¼
æ大éçµæèå²çµæµ
Collector Currentï¼pulseï¼
æ大éçµæèæ£åç
Total Dissipation (TO-92)
æ大éçµæèæ£åç
Total Dissipation (TO-126/TO-126F)
æ大éçµæèæ£åç
Total Dissipation (TO-220)
æé«ç»æ¸©
Junction Temperature
è´®å温度
Storage Temperature
çµç¹æ§ ElECTRICAL CHARACTERISTIC
Symbol
VCES
VCEO
VEBO
IC
ICP
PC
PC
PC
Tj
Tstg
Value
700
450
9
1.5
3.0
1
20
40
150
-55~+150
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¸åå¼ æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IC=10mA,IB=0
IC=1mA,IB=0
IE=1mA,IC=0
VCB=700V, IE=0
VCE=450V,IB=0
450
500
-
700
830
-
9
13
-
-
-
100
-
-
50
IEBO
hFE
VCE(sat)
VEB=7V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=200mA
VCE=5V, IC=1.5A
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
-
-
10
6
20
40
8
25
40
4
11
-
-
0.15
0.8
-
0.5
2.0
VBE(sat)
tf
ts
IC=1.0A, IB=0.25A
VCC=24V IC=0.5A,IB1=-IB2=0.1A
VCC=24V IC=0.5A,IB1=-IB2=0.1A
-
0.6
1.8
-
-
0.7
-
-
4
fT
VCE=10V, Ic=0.2A
çç¹æ§ THERMAL CHARACTERISTIC
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4
-
-
符 å· æå°å¼ æ大å¼
Parameter
Symbol min
max
ç»å°ç¯å¢ççé» Thermal Resistance Junction Ambient TO-92
Rth(j-a)
-
125
ç»å°ç®¡å£³ççé» Thermal Resistance Junction Case TO-92
Rth(j-c)
-
49
ç»å°ç®¡å£³ççé» Thermal Resistance Junction Case
TO-126
Rth(j-c)
-
6.25
ç»å°ç®¡å£³ççé» Thermal Resistance Junction Case
TO-126F Rth(j-c)
-
6.25
ç»å°ç®¡å£³ççé» Thermal Resistance Junction Case
TO-220
Rth(j-c)
-
3.125
åä½
Unit
V
V
V
A
A
W
W
W
â
â
åä½
Unit
V
V
V
μA
μA
μA
-
-
-
V
-
V
μS
μS
MHz
åä½
Unit
â /W
â /W
â /W
â /W
â /W
çæ¬ï¼201102H
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