|
3DD13002E Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
|
◁ |
R
3DD13002E
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
éçµæâåå°æç´æµçµå
éçµæâåå°æç´æµçµå
åå°æâåºæç´æµçµå
æ大éçµæç´æµçµæµ
æ大éçµæèå²çµæµ
æ大éçµæèæ£åç
æé«ç»æ¸©
è´®å温度
Parameter
Symbol
Collector- Emitter Voltageï¼VBE=0ï¼ VCES
Collector- Emitter Voltageï¼IB=0ï¼ VCEO
Emitter-Base Voltage
Collector Currentï¼DCï¼
Collector Currentï¼pulseï¼
VEBO
IC
ICP
Total Dissipation (TO-126)
PC
Junction Temperature
Tj
Storage Temperature
Tstg
æ°å¼
Value
600
400
9
0.8
1.6
20
150
-55~+150
åä½
Unit
V
V
V
A
A
W
â
â
çµç¹æ§ ELECTRICAL CHARACTERISTIC
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼ æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
V(BR)CEO
V(BR)CBO
V(BR)EBO
Ic=10mA,IB=0
Ic=1mA,IB=0
IE=1mA,Ic=0
400
470
-
600
820
-
9
14
-
ICBO
VCB=600V, IE=0
ICEO
VCE=400V,IB=0
IEBO
VEB=9V, IC=0
-
-
5
-
-
10
-
-
5
hFE
VCE(sat)
VCE=10V, IC=50Ma
VCE=5V, IC=1A
IC=0.5A, IB=100Ma
10
20
40
3
5
-
-
0.4
0.8
VBE(sat)
tf
ts
IC=0.5A, IB=100Ma
VCC=24V IC=0.1A,IB1=-IB2=0.02A
-
1.0
1.1
-
-
0.7
-
-
4
fT
VCE=10V, Ic=0.05A
4
-
-
åä½
Unit
V
V
V
μA
μA
μA
-
-
V
V
μS
μS
MHz
çç¹æ§ THERMAL CHARACTERISTIC
项ç®
Parameter
ç»å°ç¯å¢ççé» TO-126
Thermal Resistance Junction Case TO-126
符 å· æå°å¼ æ大å¼
Symbol Value(min) Value(max)
Rth(j-c)
-
6.25
åä½
Unit
â /W
çæ¬ï¼200910D
2/5
|
▷ |