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| 3CT2A Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Half AC switching | |||
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R
3CT2A
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
ç¬¦å· æ°å¼ åä½
Parameter
Symbol Value Unit
ææéå¤å³°å¼çµå Repetitive peak off-state voltage
VDRM
500
V
ååéå¤å³°å¼çµå Repetitive peak reverse voltage
VRRM
500
V
éæå¹³åçµæµ Average on-state current
ITï¼AVï¼
2.0
A
éææ¹åæ ¹çµæµ On-state RMS current ( half sine wave)
IT(RMS)
3.2
A
ééå¤æµªæ¶å³°å¼éæçµæµ Non- repetitive surge peak on-state current
( half sine wave ,t=10ms)
ITSM
20
A
I2t for fusing ( t=10ms)
I2t
2.0
A2s
é¨æå³°å¼çµæµ Peak gate current
IGM
1
A
é¨æå³°å¼çµå Peak gate voltage
VGM
5
V
ååé¨æå³°å¼çµå Peak reverses gate voltage
VRGM
5
V
å¹³åé¨æåç Average gate power( over any 20ms period)
PG(AV)
0.5
W
åå¨æ¸©åº¦ Storage temperature
Tstg
-40~150 â
æä½ç»æ¸© Operation junction temperature
TJ
125
â
çµç¹æ§ ELECTRICAL CHARACTERISTIC (TC=25â unless otherwise stated)
项ç®
符å·
æµè¯æ¡ä»¶
æå° å
¸å æ大 åä½
Parameter
Symbol
Tests conditions
min typ max Unit
æ æ å³° å¼ é å¤ çµ æµ Peak Repetitive
VDM=VDRM, Tj=125â,
Blocking Current
IDRM
RGK=1KΩ
-
- 0.5 mA
å å å³° å¼ é å¤ çµ æµ Peak Repetitive
VRM=VRRM, Tj=125â,
Reverse Current
IRRM
RGK=1KΩ
-
- 0.5 mA
å³°å¼éæçµå Peak on-state voltage VTM ITM=4A
- ï¼ 1.7 V
é¨æ触åçµæµ Gate trigger current
IGT VDM=12V,IT=0.1A
10 - 140 μA
é¨æ触åçµå Gate trigger voltage
VGT VDM=12V,IT=0.1A
- 0.60 0.8 V
ç»´æçµæµ Holding current
IH VDM=12V, IGT=0.1A
-
-
5 mA
æä½çµæµ Latching current
IL VDM=12V, IGT=0.1A
-
- 10 mA
å¨æç¹æ§ DYNAMIC CHARACTERISTICS (TC=25â unless otherwise stated)
项ç®
符å·
æµè¯æ¡ä»¶
æå° å
¸å æ大 åä½
Parameter
Symbol
Tests conditions
min typ max Unit
ææ临ççµåä¸åç Critical
VDM=67% VDRM(MAX),
dV/dt
rate of rise of off- state voltage
Tj=125â,RGK=1KΩ
10 -
- V/μs
çæ¬ï¼201510B
2/5
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