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| 3CT12B Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Half AC switching | |||
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R
3CT12B
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
Parameter
ææéå¤å³°å¼çµå Repetitive peak off-state voltage
ååéå¤å³°å¼çµå Repetitive peak reverse voltage
éæå¹³åçµæµ Average on-state current ( half sine wave)
éææ¹åæ ¹çµæµ On-state RMS current ( all conduction angles )
ééå¤æµªæ¶å³°å¼éæçµæµ Non- repetitive surge peak on-state current
( half sine wave ,t=10ms)
I2t for fusing ( t=10ms)
é¨æå³°å¼çµæµ Peak gate current
é¨æå³°å¼çµå Peak gate voltage
ååé¨æå³°å¼çµå Peak reverses gate voltage
é¨æå³°å¼åç Peak gate power
é¨æå¹³ååç Average gate power ( over any 20ms period )
åå¨æ¸©åº¦ Storage temperature
æä½ç»æ¸© Operation junction temperature
符å·
Symbol
VDRM
VRRM
ITï¼AVï¼
IT(RMS)
ITSM
I2t
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
TVJ
æ°å¼
Value
800
800
13
20
åä½
Unit
V
V
A
A
200
A
200
A2s
5
A
5
V
5
V
20
W
0.5
W
-40~150 â
125
â
éæç¹æ§ STATIC CHARACTERISTICS (TC=25â unless otherwise stated)
项ç®
符å·
æµè¯æ¡ä»¶
æå° å
¸å æ大 åä½
Parameter
Symbol
Tests conditions
min typ max Unit
æ æ å³° å¼ é å¤ çµ æµ Peak Repetitive
Blocking Current
IDRM
VDM= VDRM(MAX),
Tj=125â
-
- 1.0 mA
å å å³° å¼ é å¤ çµ æµ Peak Repetitive
Reverse Current
IRRM
VRM= VRRM(MAX),
Tj=125â
-
- 1.0 mA
å³°å¼éæçµå Peak on-state voltage VTM ITM=40A
- 1.40 1.75 V
é¨æ触åçµæµ Gate trigger current
IGT
VDM=12V,IT=0.1A
1 10 25 mA
é¨æ触åçµå Gate trigger voltage
VGT
VDM=12V,IT=0.1A
- 0.8 1.5 V
ç»´æçµæµ Holding current
IH
VDM=12V, IGT=0.1A
-
- 60 mA
æä½çµæµ Latching current
IL
VDM=12V, IGT=0.1A
-
- 80 mA
çæ¬ï¼201510F
2/5
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