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| 20F40HF3 Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – Fast Recover Diode | |||
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R
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ£åå¹³åæ´æµçµæµ
TBCB=100â
Average forward
(TO-220HF)
current
æ´ä¸ªå¨ä»¶
per device
å侧
Symbol
VRRM
IF(AV)
å³°å¼åèå²æµªæ¶çµæµ
per diode
Peak one Cycle Surge Forward
IFSM
Current(Non-Repetitive) t=10ms
ç»æ¸©
Tj
Junction Temperature
å¨å温度
TSTG
Storage temperature range
20F40HF3
æ°å¼
Value
400
åä½
Unit
V
20
A
10
100
A
-55~+150
â
-55~+150
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS (Tc=25â unless otherwise specified)
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
VRRM
IR
VF
Tests conditions
IR =50μA
Tj =25â
Tj =125â
VR=VRRM
Tj =25â
Tj =125â
IF=10A
Value(min) Value(typ)
400
1.3
1.1
Value(max)
50
10
2.1
IF=1A, VR=30V, diF/dt=-200A/μs
trr
Tj =25â IF=10A
Tj =125â VR=100V
diF/dt=-200A/μs
22
35
50
80
åä½
Unit
V
μA
mA
V
V
ns
ns
ns
çç¹æ§ Thermal Characteristics
项ç®
Parameter
ç»å°ç®¡å£³ççé»
Thermal resistance from TO-220HF
junction to case
符å·
Symbol
Rth(j-c)
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
3.0
â/W
çæ¬ï¼200902B
2/5
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