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| 100F40AB Datasheet, PDF (2/5 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – FAST RECOVER DIODE | |||
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R
100F40AB
ç»å¯¹æ大é¢å®å¼ ABSOLUTE RATINGS (Tc=25â)
项ç®
符å·
Parameter
æ大ååéå¤å³°å¼çµå
Repetitive peak reverse voltage
æ£åå¹³åæ´æµçµæµ
Average forward current
ä¸å¯éå¤æµªæ¶æ£åçµæµ
TBCB=25â
TBCB=90â
TBCB=100â
Symbol
VRRM
IF(AV)
Surge non repetitive Forward Current
IFSM
TC=25â tP=10ms,sine halfwave
æ大å¯éå¤æµªæ¶æ£åçµæµ
Maximum repetitive Forward Current
IFRM
TC=25â Tp limited by tjï¼maxï¼D=0.5
ç»æ¸©
Tj
Junction Temperature
å¨å温度
TSTG
Storage temperature range
æ°å¼
Value
400
150
104
96
400
300
-55~+175
-55~+175
åä½
Unit
V
A
A
A
â
â
çµç¹æ§ ELECTRICAL CHARACTERISTICS (Tc=25â unless otherwise specified)
项ç®
æµè¯æ¡ä»¶
æå°å¼ å
¸åå¼
æ大å¼
Parameter
Tests conditions
Value(min) Value(typ) Value(max)
VRRM
IR =50μA
400
IR
Tj =25â
VR=VRRM
40
Tj =125â
500
VF1
Tj =25â
IF=100A
Tj =150â
1.25
1.35
1.02
VF2
Tj =25â
IF=60A
Tj =150â
1.10
1.20
0.86
trr
IF=1A, VR=30V, diF/dt=-50A/μs
50
70
S
0.6
0.8
åä½
Unit
V
μA
μA
V
V
V
V
ns
çç¹æ§ THERMAL CHARACTERISTICS
项ç®
Parameter
ç»å°ç®¡å£³ççé»
Thermal resistance from
TO-3PB
junction to case
符å·
Symbol
Rth(j-c)
æå°å¼
Value(min)
æå¤§å¼ å ä½
Value(max) Unit
0.4
K/W
çæ¬ï¼200911B
2/5
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