2SC4793 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS)

NPN
Silicon NPN Triple Diffused Transistor
R
2SC4793
V_CEO=230V (min)
2SA1837
fT=100MHz(Typ.)
RoHS
Package
APPLICATIONS
Power Amplifier Applications
FEATURES
High collector voltage V_CEO=230V (min)
Complementary to 2SA1937
High transition frequency :fT=100MHz(Typ.)
RoHS product
TO-220MF
不ORDER MESSAGE不
Order codes
2SC4793-O-MF-N-B
Marking
2SC4793
Halogen Free Package
NO
TO-220MF
Packaging
Tube
ABSOLUTE RATINGS (Tc=25℃ unless otherwise noted)
Parameter
—
Collector- Emitter Voltage
—
Collector- Emitter Voltage I_B=0
—
Emitter-Base Voltage
Collector Current DC
Base Current
Collector Dissipation(Ta=25 )
Collector Dissipation(Tc=25 )
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTIC
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Value
230
230
5
1
0.1
2.0
20
150
-55~+150
Unit
V
V
V
A
A
W
W
Parameter
Symbo min
Thermal Resistance Junction Ambient TO-220MF Rth(j-a) -
Thermal Resistance Junction Case TO-220MF Rth(j-c)
-
max
62.5
6.25
Unit
/W
/W
201311A
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