BF1202_15 Datasheet, PDF (9/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual-gate PoLo MOS-FETs

Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1202; BF1202R;
BF1202WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: V_DS = 5 V; V_G2-S = 4 V; I_D = 12 mA; T_amb = 25 °C
f
(MHz)
50
100
200
300
400
500
600
700
800
900
1 000
s₁₁
MAGNITUDE
(ratio)
0.988
0.988
0.984
0.977
0.965
0.951
0.936
0.919
0.903
0.887
0.870
ANGLE
(deg)
−3.26
−6.52
−12.99
−19.39
−25.65
−31.76
−37.68
−43.42
−48.94
−54.25
−59.34
s₂₁
MAGNITUDE
(ratio)
2.989
3.017
2.990
2.949
2.913
2.853
2.793
2.727
2.664
2.593
2.518
ANGLE
(deg)
176.2
172.5
165.0
157.6
150.3
143.2
136.3
129.5
123.0
116.7
110.5
s₁₂
MAGNITUDE
(ratio)
0.0005
0.0009
0.0018
0.0027
0.0036
0.0039
0.0042
0.0044
0.0043
0.0041
0.0038
ANGLE
(deg)
92.6
88.0
82.5
78.2
75.4
71.8
69.9
68.9
68.5
70.7
72.4
s₂₂
MAGNITUDE
(ratio)
0.995
0.995
0.994
0.992
0.990
0.988
0.986
0.984
0.980
0.975
0.970
ANGLE
(deg)
−1.50
−3.01
−5.95
−8.86
−11.79
−14.65
−17.41
−20.10
−22.69
−25.27
−27.90
Table 2 Noise data: V_DS = 5 V; V_G2-S = 4 V; I_D = 12 mA; T_amb = 25 °C
f
(MHz)
F_min
Γ_opt
R_n
(dB)
(ratio)
(deg)
(Ω)
400
0.9
0.805
28.5
50
800
1.1
0.725
47.2
40
2000 Mar 29
9