BFT25A_2015 Datasheet, PDF (8/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – BFT25A_2015

Philips Semiconductors
BFT25A
NPN 5 GHz wideband transistor
pot. unst.
region
1
stability
circle
0.5
2
MSG
7.7 dB
0.2
7 dB
+j
0
−j
0.2
0.5
1
5 dB
Γ_opt
F_min = 2.4 dB
3 dB
2
5 10
5
10
∞
4 dB
10
0.2
6 dB
5
0.5
1
See Table 10;
Z_o = 50 Ω.
Average gain parameter: MSG = 7.7 dB.
Fig 13. Noise circle figure.
2
mcd110
Table 10: Noise parameters
f (MHz)
V_CE (V)
I_C (mA)
2 000
1
1
F_min (dB)
2.4
Γ_opt
(mag)
0.72
(ang)
26
R_n/50
1.7
9397 750 13399
Product data sheet
Rev. 04 — 6 July 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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