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| BF904WR_15 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual-gate MOS-FET | |||
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product speciï¬cation
BF904WR
handboo1k,0h2alfpage
y is
(mS)
10
1
10 1
10
MLD277
b is
g is
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.15 Input admittance as a function of frequency;
typical values.
10 3
y rs
(µS)
10 2
10
MLD278
10 3
Ï rs
(deg)
Ï rs
10 2
y rs
10
1
10
1
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID =10 mA; Tamb = 25 °C.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 2
y fs
(mS)
10
MLD279
10 2
handbook1,0halfpage
yos
Ïfs
(mS)
y fs
(deg)
1
Ïfs
10
10 1
MLD280
bos
gos
1
10
102
f (MHz)
1
10 3
10 2
10
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.18 Output admittance as a function of
frequency; typical values.
1995 Apr 25
8
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