BF1208_2015 Datasheet, PDF (8/22 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOSFET

Philips Semiconductors
BF1208
Dual N-channel dual gate MOSFET
20
I_D
(mA)
16
12
8
4
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32
I_D
(mA)
24
16
8
001aaa559
(1)
(2)
(3)
(4)
(5)
(6)
0
0
1
2
3
4
5
V_supply (V)
0
0
2
4
6
V_G2-S (V)
V_DS(A) = V_DS(B) = V_supply; V_G2-S = 4 V; T_j = 25 °C;
R_G1 = 150 kΩ (connected to ground); see Figure 3.
Fig 8. Amplifier A: drain current of amplifier A as a
function of supply voltage of A and B amplifier;
typical values
(1) V_DS(B) = 5 V.
(2) V_DS(B) = 4.5 V.
(3) V_DS(B) = 4 V.
(4) V_DS(B) = 3.5 V.
(5) V_DS(B) = 3 V.
(6) V_DS(B) = 2.5 V.
V_DS(A) = 5 V; V_G1-S(B) = 0 V; gate1 (A) = open;
T_j = 25 °C.
Fig 9. Amplifier A: drain current as a function of gate2
voltage; typical values
120
V_unw
(dBµV)
110
001aac195
0
gain
reduction
(dB)
10
001aac196
20
100
30
90
40
80
0
10
20
30
40
50
gain reduction (dB)
V_DS(A) = V_DS(B) = 5 V; V_G1-S(B) = 0 V; f_w = 50 MHz;
f_unw = 60 MHz; T_amb = 25 °C; see Figure 33.
Fig 10. Amplifier A: unwanted voltage for 1 %
cross-modulation as a function of gain
reduction; typical values
50
0
1
2
3
4
V_AGC (V)
V_DS(A) = V_DS(B) = 5 V; V_G1-S(B) = 0 V; f = 50 MHz;
see Figure 33.
Fig 11. Amplifier A: gain reduction as a function of
AGC voltage; typical values
9397 750 14254
Product data sheet
Rev. 01 — 16 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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