BF1102_2015 Datasheet, PDF (8/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOS-FETs

Philips Semiconductors
Dual N-channel dual gate MOS-FETs
Product specification
BF1102; BF1102R
10²
handbook, halfpage
yis
(mS)
10
MGS370
1
10^−1
10
bis
gis
10²
f (MHz)
10³
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.15 Input admittance as a function of frequency;
typical values.
10³
handbook, halfpage
yrs
(mS)
10²
10
MCD970 _−103
ϕ_rs
(deg)
ϕ_rs
−10²
yrs
−10
1
10
−1
10²
10³
f (MHz)
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook¹, ⁰ha²lfpage
|yfs|
(mS)
10
| y _{f s|}
MGS372 ₁₀₂
−ϕ_fs
(deg)
ϕ_fs
10
10
handbook, halfpage
yos
(mS)
1
MCD971
bos
1
1
10
10²
f (MHz)
10³
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
10^−1
10
gos
10²
10³
f (MHz)
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.18 Output admittance as a function of
frequency; typical values.
2000 Apr 11
8