BFQ591_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ591
handbook^−,³h⁰alfpage
dim
(dB)
−40
MLD802
−50
−60
−70
0
40
80
120
IC (mA)
V_o = 700 mV; V_CE = 12 V; T_amb = 25 °C; f_(p+q+r) = 793.25 MHz.
Fig.9 Intermodulation distortion as function of
collector current; typical values.
handbook^−,³h⁰alfpage
d2
(dB)
−40
−50
−60
−70
−80
0
40
MLD803
80
120
IC (mA)
V_o = 316 mV; V_CE = 12 V; f_(p+q) = 810 MHz.
Fig.10 Second order intermodulation distortion as
function of collector current; typical values.
2002 Feb 04
7