BFG325W_15 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 14 GHz wideband transistor

Philips Semiconductors
8. Application information
Table 8: SPICE parameters of the BFG325 DIE
Sequence
Parameter
1
IS
2
BF
3
NF
4
VAF
5
IKF
6
ISE
7
NE
8
BR
9
NR
10
VAR
11
IKR
12
ISC
13
NC
14
RB
15
RE
16
RC
17
CJE
18
VJE
19
MJE
20
CJC
21
VJC
22
MJC
23
XCJC
24
FC
25
TF
26
XTF
27
VTF
28
ITF
29
PTF
30
TR
31
KF
32
AF
33
TNOM
34
EG
35
XTB
36
XTI
37
Q1.AREA
BFG325W/XR
NPN 14 GHz wideband transistor
Value
Unit
26.6
aA
200
-
1
-
40
V
105
mA
2.3
fA
2.114
-
10
-
1
-
2.5
V
10
A
0
aA
1.5
-
3.6
Ω
1.5
Ω
2.6
Ω
185.6
fF
890
mV
0.294
-
77.06
fF
601
mV
0.159
-
1
-
0.7
-
8.1
ps
10
-
1000
V
150
mA
0
deg
0
ns
0
-
1
-
25
°C
1.014
eV
0
-
8
-
2.5
-
9397 750 14246
Product data sheet
Rev. 01 — 2 February 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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