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| BF909WR_2015 Datasheet, PDF (7/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual-gate MOS-FET | |||
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Philips Semiconductors
N-channel dual-gate MOS-FET
Product speciï¬cation
BF909WR
20
handbook, halfpage
ID
(mA)
16
12
8
MLB944
VGG = 5 V
4.5 V
4V
3.5 V
3V
4
0
0
2
4
6
VG2 S (V)
VDS = 5 V; Tj = 25 °C.
RG1 = 120 k⦠(connected to VGG).
Fig.11 Drain current as a function of gate 2 voltage;
typical values; see Fig.17.
handbook,4h0alfpage
I G1
(µA)
30
20
10
MLB945
VGG = 5 V
4.5 V
4V
3.5 V
3V
0
0
2
4
6
VG2 S (V)
VDS = 5 V; Tj = 25 °C.
RG1 = 120 k⦠(connected to VGG).
Fig.12 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.17.
handboo1k,0h2alfpage
y is
(mS)
10
1
10 1
10
MLB946
b is
g is
102
f (MHz)
10 3
10 3
y rs
(µS)
10 2
10
1
10
MLB947
10 3
Ï rs
(deg)
Ï rs
10 2
y rs
10
1
102
f (MHz)
10 3
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.13 Input admittance as a function of frequency;
typical values.
VDS = 5 V; VG2 = 4 V.
ID = 15 mA; Tamb = 25 °C.
Fig.14 Reverse transfer admittance and phase as
a function of frequency; typical values.
1997 Sep 05
7
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