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BF1109_2015 Datasheet, PDF (7/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual-gate MOS-FETs
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
102
handbook, halfpage
yis
(mS)
10
1
10−1
MDA620
bis
gis
handbook1, 0h3alfpage
|yrs|
(mS)
102
10
MDA621 −103
ϕrs
(deg)
|yrs|
−102
ϕrs
−10
10−2
10
102
f (MHz)
103
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.12 Input admittance as a function of frequency;
typical values.
1
−1
10
102
103
f (MHz)
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.13 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook1, 0h2alfpage
|yfs|
(mS)
10
MDA622 −102
handbook,1h0alfpage
ϕfs
yos
|yfs|
(deg)
(mS)
1
ϕfs
−10
10−1
MDA623
bos
gos
1
−1
10
102
f (MHz)
103
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.14 Forward transfer admittance and phase as
a function of frequency; typical values.
10−2
10
102
f (MHz)
103
VDS = 9 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.15 Output admittance as a function of
frequency; typical values.
1997 Dec 08
7
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